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参数资料
| 型号： | MS2601 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN RF POWER TRANSISTOR |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 46K |
| 代理商： | MS2601 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
45
V
BVCER
IC = 1.0 mA
45
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 30 V
0.5
mA
hFE
VCE = 5 V
IC = 100 mA
10
150
---
POUT
PG
ηηηη
C
VCC = 30 V
PIN = 0.3 W
f = 2700 to 3100 MHz
Pulse Width = 100
S
Duty Cycle = 10%
1.0
5.2
27
W
dB
%
NPN RF POWER TRANSISTOR
MS2601
DESCRIPTION:
The
ASI MS2601 is Common Base
Device Designed for Pulsed S-Band
Radar Amplifier Applications up to 3.1
GHz.
FEATURES INCLUDE:
Input/Output Matching
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
IC
0.45 A
VCC
34 V
PDISS
11.5 W @ TC = 25 °C
TJ
-65 °C to+200 °C
TSTG
-65 °C to+200 °C
θθθθ
JC
13.0 °C/W
PACKAGE STYLE 400 x 400 2NL FLG
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
1
2
4
3
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