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参数资料
| 型号： | MS2613 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, M218, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 119K |
| 代理商： | MS2613 |
12-05-2002
MS2613
DESCRIPTION:
The MS2613 is a high power silicon bipolar NPN transistor
specifically designed for pulsed S-Band radar driver applications.
The MS2613 is capable of operation over a wide range of pulse
widths, duty cycles and temperatures. Gold metalization and
internal impedance matching maximize product reliability and
consistency.
ABSOLUT
ABSOLUTE MAXIMUM RATINGS
E MAXIMUM RATINGS
E MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
VCC
Collector-Supply Voltage
34
V
PDISS
Power Dissipation
40
W
IC
Device Current
1.8
A
TJ
Junction Temperature
200
°°°°C
TSTG
Storage Temperature
-65 to +200
°°°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
3.75
°°°°C/W
Features
3.1 – 3.5 GHz
30 VOLTS
POUT = 5.0 WATTS
GP = 5.2 dB GAIN MINIMUM
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLACATIONS
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