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参数资料
| 型号： | MS2619 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 4 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 119K |
| 代理商： | MS2619 |
12-05-2002
MS2619
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°°°°C)
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO
IC = 40mA
IE = 0mA
55
---
V
BVEBO
IE = 8mA
IC = 0mA
3.5
---
V
BVCER
IC = 40mA
RBE = 10
55
---
V
ICES
VCE = 42V
---
30
mA
HFE
VCE = 5V
IC = 4mA
30
---
150
---
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT
f = 2900 - 3100GHz
PIN = 25W
VCC = 42V
105
---
W
ηηηηC
f = 2900 - 3100GHz
PIN = 25W
VCC = 42V
32
---
%
GP
f = 2900 - 3100GHz
PIN = 25W
VCC = 42V
6.2
---
dB
Conditions Pulse Width = 50
sec
Duty Cycle = 10%
IMPEDANCE DATA
FREQ
ZIN(
)
ZCL(
)
2.9 GHz
15.0 – j9.0
5.0 – j1.0
3.0 GHz
20.0 – j9.5
4.8 + j0.5
3.1 GHz
13.5 – j5.0
3.5 + j2.5
PIN = 25 W
VCC = 42 V
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