参数资料
型号: MS3024
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: HERMETIC SEALED, M210, STRIPAC-2
文件页数: 1/4页
文件大小: 125K
代理商: MS3024
MS3024
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS3024 is a common base hermetically sealed silicon NPN
microwave transistor that utilizes a fishbone emitter ballasted
geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at any phase angle
under rated conditions. The MS3024 was designed for Class C
amplifier applications in the 1.0 – 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCC
Collector-Supply Voltage
35
V
IC
Device Current
1
A
PDISS
Power Dissipation
29
W
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
–65 to +200
°°C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
6
°°C/W
Features
EMITTER BALLASTED
INFINITE VSWR CAPABILITY AT RATED CONDITIONS
REFRACTORY/GOLD METALLIZATION
HERMETIC STRIPAC PACKAGE
P
OUT = 5.0 W MIN. WITH 7.0 dB GAIN AT 2.0 GHz
RF AND MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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