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参数资料
| 型号： | MS3383 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, M210, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 230K |
| 代理商： | MS3383 |
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MS3383
DESCRIPTION:
The MS3383 is a common base, hermetically sealed silicon NPN
microwave power transistor. This device is designed for Class C
applications in the 1 - 3 GHz frequency range. Gold metallization
and emitter ballasting provide long term reliability and superior
ruggedness.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
6.0
W
VCC
Collector-Supply Voltage*
30
V
IC
Device Current*
200
mA
TJ
Junction Temperature
200
C
TSTG
Storage Temperature
-65 to +200
C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
25
°°°°C/W
****Applies only to rated RF amplifier operation
Features
GOLD METALIZATION
POUT = 1.0 W MINIMUM
3.0 GHz
GP = 7.0 dB
INFINITE VSWR CAPABLE @ RATED CONDITIONS
HERMETIC PACKAGE
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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