- 您现在的位置：买卖IC网 > PDF目录96084 > MS652 (MICROSEMI POWER PRODUCTS GROUP) UHF BAND, Si, NPN, RF POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MS652 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.280 INCH, PLASTIC, M122, STUD PACKAGE-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 110K |
| 代理商： | MS652 |
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS652/MS652S
5.0 Watts, 12.5 Volts, Class C
UHF Applications
GENERAL DESCRIPTION
The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF communications. It withstands
severe mismatch under normal operating conditions.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
°C
25 Watts
BVCBO Collector to Base Voltage
36 Volts
BVCEO Collector to Emitter Voltage
16 Volts
BVEBO Emitter to Base Voltage
4.0 Volts
IC
Collector Current
2.0 Amps
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+200
°C
.280 4L STUD(M122), Epoxy sealed
MS652
.280 4LSL (M123), Epoxy sealed
MS652S
FUNCTIONAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
POUT
Power Out
5.0
-
W
PIN
Power Input
-
0.5
W
GP
Power Gain
F = 512 MHz
VCE = 12.5V
10.0
-
dB
η
Efficiency
POUT = 5W
60
-
%
ELECTRICAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVCES
Collector to Emitter Breakdown
IC = 25 mA, VBE = 0
36
-
V
BVCEO
Collector to Emitter Breakdown
IC = 50 mA, IB = 0
16
-
V
BVCBO
Collector to Base Breakdown
IC = 25 mA, IE = 0
36
-
V
BVEBO
Emitter to Base Breakdown
IE = 5 mA, IC = 0
4.0
-
V
ICES
Collector to Emitter Leakage
VCE = 15 V, VBE = 0
-
1.0
mA
hFE
DC – Current Gain
IC = 200 mA, VCE = 5 V
10
-
150
-
COB
Output Capacitance
F = 1MHz, VCB = 15V
-
15
pF
θjc1
Junction-Case Thermal Resistance
-
7
°C/W
NOTES: 1. At rated output power with MSC fixture.
Rev. A: May. 2010
相关PDF资料 |
PDF描述 |
|---|---|
| MS8050-H-TP | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MS8050-L-TP | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MSA1022-BT3 | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| MSA1022-BT1 | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| MSAD165-16 | 165 A, 1600 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MS6524F | 功能描述:线性和开关式电源 24V 65W 2.7A RoHS:否 制造商:TDK-Lambda 产品:Switching Supplies 开放式框架/封闭式:Enclosed 输出功率额定值:800 W 输入电压:85 VAC to 265 VAC 输出端数量:1 输出电压（通道 1）:20 V 输出电流（通道 1）:40 A 商用/医用: 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:Rack 长度: 宽度: 高度: |
| MS-6526GL-L | 制造商:Micro-Star International 功能描述:M-ATX P4 INTEL 845GL - Bulk |
| MS-6526GL-L RPL | 制造商:Micro-Star International 功能描述:M-ATX P4 INTEL 845GL - Bulk |
| MS-6526GL-L-DF | 制造商:Micro-Star International 功能描述:M-ATX P4 INTEL 845GL - Bulk |
| MS-6528 LE | 制造商:Micro-Star International 功能描述:ATX SOCKET 478/SDRAM - Bulk |
发布紧急采购，3分钟左右您将得到回复。