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参数资料
| 型号： | MS8351-P2819 |
| 厂商： | MICROSEMI CORP-LOWELL |
| 元件分类： | 射频混频器 |
| 英文描述： | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
| 封装： | 0.005 X 0.005 INCH, 0.005 INCH HEIGHT, ROHS COMPLIANT, P2819, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 123K |
| 代理商： | MS8351-P2819 |
MS8351 – P2819
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GaAs Schottky Diodes
Low
TM
Copyright
2008
Rev: 2009-01-19
T Series Pair
C
Flip Chip GaAs Schottky:
Series Pair – Low Capacitance Design
Dimensions
Size: 28 x 19 mils
Thickness: 5 mils
Bond Pad Size: 5 x 5 mils
Features
●
Capacitance (45 fF Typ.)
●
Low Series Resistance (7
Typ.)
●
Cut-Off Frequency > 500 GHz
●
Large Gold Bond Pads
Specifications @ 25°C
(Per Junction)
●
V
F (1 mA): 600–800 mV
●
V
F (1 mA): 10 mV Max.
●
R
S (10 mA): 9 Max.
●
I
R (3 V): 10 A Max.
●
C
T (0 V): 60 fF Max.
Maximum Ratings
Description
The MS8351 is a GaAs flip chip series pair Schottky
device designed for use as balanced mixer elements at
microwave and millimeter wave frequencies. Their
high cut-off frequency insures good performance at
frequencies to 100 GHz. Applications include:
transceivers, digital radios and automotive radar
detectors.
These flip chip devices incorporate Microsemi’s
expertise in GaAs material processing, silicon nitride
protective coatings and high temperature metallization.
They have large, 5 x 5 mil, bond pads for ease of
insertion. The MS8351 is priced for high volume
commercial and industrial applications.
Insertion Temperature
250°C for 10 Seconds
Incident Power
+20 dBm @ 25°C
Forward Current
15 mA @ 25°C
Reverse Voltage
3 V
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +150°C
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