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参数资料
| 型号： | MS838C04 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 40 V, SILICON, RECTIFIER DIODE |
| 封装： | TFP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 471K |
| 代理商： | MS838C04 |
1
MS838C04 (40V/30A)
Schottky Barrier Diode
Features
Low VF
Super high speed switching
High reliability by planer design
Applications
High speed power switching
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25C Unless otherwise specified)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
40
V
Average output current
IO
Square wave duty =1/2
Tc =111C
30 *
A
Non-repetitive surge current **
IFSM
Sine wave, 10ms 1shot
180
A
Operating junction temperature
Tj
150
C
Storage temperature
Tstg
-40 to +150
C
*Out put current of center tap full wave connection.
**Rating per element
Electrical characteristics (at Ta=25C Unless otherwise specified)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF = 12.5 A
0.53
V
Reverse current***
IR
VR =VRRM
8
mA
Thermal resistance
Rth(j-c)
Junction to case
1.2
C/W
***Rating per element
Mechanical characteristics
Item
Conditions
Ratings
Units
Approximate mass
0.8
g
Outline Drawings [mm]
Connection diagram
TFP
http://www.fujisemi.com
FUJI Diode
838C04
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