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参数资料
| 型号： | MSAFI30N20A |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | HERMETIC SEALED, POWER PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 51K |
| 代理商： | MSAFI30N20A |
DESCRIPTION
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
BVDSS
VGS = 0 V, ID = 250
A
200
V
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
BV
DSS/
T
J
0.29
V/
°C
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
2.0
4.0
V
Gate-to-Source Leakage Current
IGSS
VGS =
± 20V
DC, VDS = 0 TJ = 25
°C
T J = 125
°C
±100
±200
nA
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
IDSS
VDS =0.8
BV
DSS
TJ = 25
°C
VGS = 0 V
TJ = 125
°C
25
250
A
Static Drain-to-Source On-State Resistance (1)
RDS(on)
VGS= 10V, ID= 20A
TJ = 25
°C
ID= 30A
TJ = 25
°C
ID= 20A
TJ = 125
°C
1.5
0.085
0.090
Forward Transconductance (1)
gfs
VDS
≥ 15 V; I
D = 20 A
9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
3500
700
110
pF
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 100 V,
ID = 30 A, RG = 2.35
35
190
170
130
ns
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 100V, ID = 30A
55
8
30
115
22
60
nC
Body Diode Forward Voltage (1)
VSD
IF = IS, VGS = 0 V
MSAE
MSAF
1.2
1.9
V
Reverse Recovery Time (Body Diode)
trr
IF = 10 A,
MSAE
-di/dt = 100 A/
s,
MSAF
50
950
ns
Reverse Recovery Charge
Qrr
IF = 10 A,
MSAE
di/dt = 100 A/
s,
MSAF
tbd
9
C
Electrical Parameters @ 25
°°C (unless otherwise specified)
Notes
(1)
Pulse test, t
≤≤ 300 s, duty cycleδδ ≤≤ 2%
(2)
Microsemi Corp. does not manufacture themosfet die; contact company for details.
MSAEI30N20A
MSAFI30N20A
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