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| 型号： | MSB709-RT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | PNP General Purpose Amplifier Transistor Surface Mount |
| 中文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318D-04, SC-59, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 111K |
| 代理商： | MSB709-RT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
–60
Vdc
Collector–Emitter Voltage
–45
Vdc
Emitter–Base Voltage
–7.0
Vdc
Collector Current — Continuous
–100
mAdc
Collector Current — Peak
–200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –10
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –10
μ
Adc, IE = 0)
Collector–Base Cutoff Current (VCB = –45 Vdc, IE = 0)
Collector–Emitter Cutoff Current (VCE = –10 Vdc, IB = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = –2.0 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE1
–45
—
Vdc
–60
—
Vdc
–7.0
—
Vdc
—
–0.1
μ
Adc
—
–100
nAdc
210
340
—
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
VCE(sat)
—
–0.5
Vdc
DEVICE MARKING
Marking Symbol
AR
X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
Order this document
by MSB709–RT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
相关PDF资料 |
PDF描述 |
|---|---|
| MSB709RT1 | PNP General Purpose Amplifier Transistor Surface Mount |
| MSB709-RT1 | PNP General Purpose Amplifier Transistor Surface Mount |
| MSB710-QT1 | PNP General Purpose Amplifier Transistors Surface Mount |
| MSB710-RT1 | PNP General Purpose Amplifier Transistor Surface Mount |
| MSB710-RT1 | PNP General Purpose Amplifier Transistors Surface Mount |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MSB-709RT1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:PNP General Purpose Amplifier Transistor Surface Mount |
| MSB709-RT1G | 功能描述:两极晶体管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSB709-RT2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MSB710 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:PNP General Purpose Amplifier Transistor Surface Mount |
| MSB710QT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:PNP General Purpose Amplifier Transistors Surface Mount |
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