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参数资料
| 型号： | MSB710-RT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PNP General Purpose Amplifier Transistor Surface Mount |
| 中文描述： | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318D-04, SC-59, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 125K |
| 代理商： | MSB710-RT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–50
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10
μ
Adc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10
μ
Adc, IC = 0)
V(BR)EBO
–7.0
—
Vdc
Collector–Base Cutoff Current
(VCB = –20 Vdc, IE = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = –150 mAdc)
ICBO
—
–0.1
μ
Adc
MSB710–QT1
MSB710–RT1
(VCE = –10 Vdc, IC = 500 mAdc)
hFE1
hFE2
85
120
40
170
240
—
—
Collector–Emitter Saturation Voltage
(IC = –300 mAdc, IB = –30 mAdc)
VCE(sat)
—
–0.6
Vdc
Collector–Base Saturation Voltage
(IC = –300 mAdc, IB = –30 mAdc)
VBE(sat)
—
–1.5
Vdc
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
Cob
—
15
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSB710-RT1G | 功能描述:两极晶体管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSB73D | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:RED LED ENCAPSULATED IN A 1mm x 5mm RECTANGULAR BARS PACKAGE |
| MSB73DA | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:ULTRA HIGH BRIGHTNESS RECTANGULAR BAR RED LED LAMP |
| MSB74D | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:1.2mm x 3.4mm RECTANGULAR BAR LED LAMP |
| MSB75D | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:1.9mm x 3.1mm RECTANGULAR BAR LED LAMP |
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