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参数资料
| 型号： | MSC1015MP |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.280 INCH, HERMETIC SEALED, M115, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 93K |
| 代理商： | MSC1015MP |
MSC1015MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MSC1015MP is a gold-metallized, epitaxial, silicon NPN power
transistor designed for applications requiring high peak power and
low duty cycles, such as IFF, DME, and TACAN. It is packaged in the
.280" input-matched stripline package, resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
1.5
A
PDISS
Power Dissipation
87.5
W
TJ
Junction Temperature
+ 200
°°C
TSTG
Storage Temperature
–65 to +150
°°C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
2
°°C/W
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN APPLICATIONS
20 W (typ.) IFF 1030 – 1090 MHz
15 W (min.) DME 1025 – 1150 MHz
15 W (typ.) TACAN 960 –1215 MHz
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
20:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE CONFIGURATION
RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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