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参数资料
| 型号： | MSC1175M |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 140K |
| 代理商： | MSC1175M |
MSC1175M
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)
C)
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 10 mA
IE = 0 mA
65
---
V
BVEBO
IE = 1 mA
IC = 0 mA
3.5
---
V
BVCER
IC = 15 mA
RBE = 10
65
---
V
ICES
VCE = 50 V
---
12.5
mA
hFE
VCE = 5 V
IC = 1 A
15
---
120
---
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
POUT
f = 1025 - 1150 MHz
PIN = 30 W
VCC = 50 V
175
190
---
W
ηη
C
f = 1025 - 1150 MHz
PIN = 30 W
VCC = 50 V
40
42
---
%
GP
f = 1025 - 1150 MHz
PIN = 30 W
VCC = 50 V
7.7
8.0
---
dB
Conditions
Pulse Width = 10
S Duty Cycle = 1%
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