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参数资料
| 型号： | MSC1300M |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 14K |
| 代理商： | MSC1300M |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 10 mA
65
v
BVCER
IC = 25 mA
RBE = 10
65
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 50 V
25
mA
hFE
VCE = 5.0 V
IC = 1.0 A
15
120
---
GP
ηηηη
C
VCC = 50 V
POUT = 300 W
f = 1090 MHz
6.3
35
6.7
42
dB
%
Pulse Width = 10 sec, Duty Cycle 10 %
NPN SILICON RF POWER TRANSISTOR
MSC1300M
PACKAGE STYLE .400 2NL FLG
DESCRIPTION:
The
ASI MSC1300M is a high power
Class C, common Base transistor,
Designed for IFF/DME/TACAN
Applications.
FEATURES:
Internal Input/Output Matching Networks
P
G = 6.3 dB at 300 W/1090 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
20 A
VCC
55 V
PDISS
625 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θθθθ
JC
0.20 °C/W
MIN IMU M
inches / m m
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
M AXIM U M
.396 / 10.06
.407 / 10.34
.130 / 3.30
inches / m m
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C
E
N
D
M
G
4x .062 x 45°
P
L
K
I
J
2X B
.025 x 45°
A
N
M
.118 / 3.00
.131 / 3.33
.020 / 0.51
.030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03
.415 / 10.54
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
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