参数资料
型号: MSC1600M
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.500 INCH, HERMETIC SEALED, M216, 2 PIN
文件页数: 1/5页
文件大小: 167K
代理商: MSC1600M
MSC1600M
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MSC1600M is a high power pulsed transistor specifically designed
for IFF avionics applications. It is designed for operation under short
pulse width and low duty cycle pulse conditions and is capable of
withstanding a minimum 25:1 load mismatch at rated RF conditions.
Internal impedance matching and gold metallization ensure high
product reliability and consistency.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤≤ 100°°C)
1670
W
IC
Device Current*
43
A
VCC
Collector - Base Voltage*
55
V
TJ
Junction Temperature
+250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance*
0.09
°°C/W
*Applies only to rated RF amplifier operation
Features
1090 MHz
25:1 VSWR CAPABILITY
P
OUT = 600 WATTS
G
P = 6.0 dB MINIMUM
GOLD METALIZATION
INPUT MATCHING
COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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