参数资料
型号: MSC80917
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: NPN SILICON RF MICROWAVE TRANSISTOR
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: 0.280 INCH, FM-2
文件页数: 1/1页
文件大小: 78K
代理商: MSC80917
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
45
V
BVCEO
IC = 5.0 mA
20
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 35 V
1.0
mA
hFE
VCE = 5.0 V
IC = 100 mA
20
120
GP
POUT
ηηηη
VCE = 35 V
PIN = 400 mW
f = 1025 to 1150 MHz
PULSE WIDTH
= 10
S
DUTY CYCLE
= 1.0%
10
4.0
35
dB
W
%
NPN SILICON RF MICROWAVE TRANSISTOR
MSC80917
DESCRIPTION:
The
ASI MSC80917 is low level
Class-C, Common Base Device
Designed for IFF, DME driver
Applications.
FEATURES INCLUDE:
Omnigold Metalization System
P
OUT 4.0 W Min.
G
P = 10 dB
MAXIMUM RATINGS
IC
1.0 A
VCE
37 V
PDISS
7.5 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
35 °C/W
PACKAGE STYLE .280 2L FL (B)
1 = COLLECTOR
2 = BASE
3 = EMITTER
1
2
3
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