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参数资料
| 型号： | MSC82005 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED PACKAGE, FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 15K |
| 代理商： | MSC82005 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
45
V
BVCER
IC = 5.0 mA
RBE = 10
45
V
BVEBO
IE = 1.0 mA
3.5
V
ICBO
VCB = 28 V
2.5
mA
hFE
VCE = 5.0 V
IC = 500 mA
15
120
---
Cob
VCB = 28 V
f = 1.0 MHz
10
pF
PG
ηηηη
C
VCC = 28 V
POUT = 5.0 W
f = 2.0 GHz
7.0
35
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC82005
DESCRIPTION:
The
ASI MSC82005 is Designed for
General Purpose Class C Power
Amplifier Applications up to 2000 MHz.
FEATURES:
P
G = 7.0 dB min. at 5W/ 2,000 MHz
Common Base
Hermetic Microstrip Package
Omnigold Metalization System
MAXIMUM RATINGS
IC
1.0 A
VCC
35 V
PDISS
29 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θθθθ
JC
6.0 °C/W
PACKAGE STYLE .250 2L FLG
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G
I
J
K
H
F
B
E
C
D
A
N
M
P
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19
.185 / 4.70
.135 / 3.43
.119 / 3.02
.125 / 3.18
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