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参数资料
| 型号： | MSCD70-18 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 整流器 |
| 英文描述： | 70 A, 1800 V, SILICON, RECTIFIER DIODE |
| 封装： | CASE D1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 294K |
| 代理商： | MSCD70-18 |
MSKD70_MSAD70_MSCD70 - Rev 1
www.microsemi.com
Dec, 2009
1/4
MSKD70 ; MSAD70 ; MSCD70
Module Type
TYPE
VRRM
VRSM
MSKD70-08
MSKD70-12
MSKD70-16
MSKD70-18
MSAD70-08
MSAD70-12
MSAD70-16
MSAD70-18
MSCD70-08
MSCD70-12
MSCD70-16
MSCD70-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Values
Units
IFAV
Tc=100
℃
70
A
IFSM
t=10mS Tvj =45
℃
1400
A
i2t
t=10mS Tvj =45
℃
9800
A2s
Visol
a.c.50Hz;r.m.s.;1min
3000
V
Tvj
-40 to 150
℃
Tstg
-40 to 125
℃
Mt
To terminals(M5)
2
．5-4
Nm
Ms
To heatsink(M5)
2
．5-4
Nm
Weight
Module
110
g
Thermal Characteristics
Symbol
Conditions
Values
Units
Rth(j-c)
Per diode
0.51
℃/W
Rth(c-s)
Module
0.1
℃/W
Electrical Characteristics
Circuit
MSKD
1
3
2
MSAD
1
3
2
MSCD
1
3
2
Glass Passivated Rectifier
Diode Modules
VRRM 800 to 1800V
IFAV
70 Amp
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Features
Blocking voltage:
800 to 1800V
Heat transfer through aluminum oxide ceramic
isolated metal baseplate
Glass passivated chip
Symbol
Conditions
Values
Units
VFM
T=25
℃ IFM =200A
1.48
V
IRD
Tvj=TvjM VRD=VRRM
≤5
mA
相关PDF资料 |
PDF描述 |
|---|---|
| MSKD70-18 | 70 A, 1800 V, SILICON, RECTIFIER DIODE |
| MSAD70-16 | 70 A, 1600 V, SILICON, RECTIFIER DIODE |
| MSCD70-12 | 70 A, 1200 V, SILICON, RECTIFIER DIODE |
| MSD100-08 | 3 PHASE, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| MSD100-16 | 3 PHASE, 1600 V, SILICON, BRIDGE RECTIFIER DIODE |
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