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参数资料
| 型号： | MSD1328-RT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | IC, UCN5895 OCT SERIAL CE DRVR |
| 中文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318D-04, SC-59, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 112K |
| 代理商： | MSD1328-RT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
25
Vdc
Collector–Emitter Voltage
20
Vdc
Emitter–Base Voltage
12
Vdc
Collector Current — Continuous
500
mAdc
Collector Current — Peak
1000
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10
μ
Adc, IE = 0)
Collector–Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
DC Current Gain(1)
(VCE = 2.0 Vdc, IC = 500 mAdc)
Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 20 mAdc)
Base–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
1. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
V(BR)CEO
20
—
Vdc
V(BR)CBO
25
—
Vdc
V(BR)EBO
12
—
Vdc
ICBO
—
0.1
μ
Adc
hFE
200
350
—
VCE(sat)
VBE(sat)
—
0.4
Vdc
—
1.2
Vdc
DEVICE MARKING
Marking Symbol
1
X
DR
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSD1328–RT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSD1328-RT1_04 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Low Voltage Output Amplifiers |
| MSD1328-RT1G | 功能描述:两极晶体管 - BJT 500mA 25V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD1328-ST1 | 功能描述:两极晶体管 - BJT 500mA 25V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD1328-ST1G | 功能描述:两极晶体管 - BJT 500mA 25V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD14PM118S9 | 制造商:SOURIAU 功能描述: |
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