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参数资料
| 型号： | MSD200-16 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 桥式整流 |
| 英文描述： | 3 PHASE, 1600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | CASE M3, 5 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 154K |
| 代理商： | MSD200-16 |
MSD200-16
MSD200-16-Rev 0
www.microsemi.com
May, 2009
1/3
Module Type
TYPE
VRRM
VRSM
MSD200 - 16
1600V
1700V
Maximum Ratings
Symbol
Conditions
Values
Units
ID
Tc=100
℃
200
A
IFSM
t=10mS Tvj =45
℃
2240
A
i2t
t=10mS Tvj =45
℃
25000
A2s
Visol
a.c.50Hz;r.m.s.;1min
3000
V
Tvj
-40 to 150
℃
Tstg
-40 to 125
℃
Mt
To terminals(M6)
5±15%
Nm
Ms
To heatsink(M6)
5±15%
Nm
Weight
Module
230
g
Thermal Characteristics
Symbol
Conditions
Values
Units
Rth(j-c)
Per diode
0.45
℃/W
Rth(c-s)
Module
0.025
℃/W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
VRRM 1600V
ID
200 Amp
Features
Three phase bridge rectifier
Blocking voltage: 1600V
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
Glass passivated chip
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
-
+
~
MSD
Symbol
Conditions
Values
Units
VFM
T=25
℃ IFM =300A
1.55
V
IRD
Tvj =25
℃ VRD=VRRM
Tvj =150
℃ VRD=VRRM
≤0.3
≤5
mA
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