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参数资料
| 型号： | MSD42WT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT |
| 中文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 77K |
| 代理商： | MSD42WT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This NPN Silicon Planar Transistor is designed for general purpose amplifier
applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
300
Vdc
Collector-Emitter Voltage
300
Vdc
Emitter-Base Voltage
6.0
Vdc
Collector Current — Continuous
150
mAdc
DEVICE MARKING
MSD42WT1 = H1D
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation(1)
PD
TJ
Tstg
150
mW
Junction Temperature
150
°
C
Storage Temperature Range
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 100
μ
Adc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 100
μ
Adc, IE = 0)
Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0)
Emitter–Base Cutoff Current (VEB = 6.0 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
Collector-Emitter Saturation Voltage(2) (IC = 200 mAdc, IB = 2.0 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
300
—
Vdc
300
—
Vdc
6.0
—
Vdc
—
0.1
μ
A
—
0.1
μ
A
hFE1
hFE2
25
40
—
—
—
VCE(sat)
—
0.5
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MSD42WT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN GENERAL PURPOSE
HIGH VOLTAGE
TRANSISTORS
SURFACE MOUNT
Motorola Preferred Devices
CASE 419–02, STYLE 3
SC–70/SOT–323
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSD42WT1G | 功能描述:两极晶体管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD42WT1G_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistors |
| MSD4410C | 功能描述:LED 显示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 显示器类型:7 Segment 数位数量:2 字符大小:7.8 mm x 14.22 mm 照明颜色:Red 波长:628 nm 共用管脚:Common Anode 工作电压:2.05 V 工作电流:20 mA 最大工作温度:+ 85 C 最小工作温度:- 35 C 封装:Tube |
| MSD4440C | 功能描述:LED 显示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 显示器类型:7 Segment 数位数量:2 字符大小:7.8 mm x 14.22 mm 照明颜色:Red 波长:628 nm 共用管脚:Common Anode 工作电压:2.05 V 工作电流:20 mA 最大工作温度:+ 85 C 最小工作温度:- 35 C 封装:Tube |
| MSD4440C_Q | 功能描述:LED 显示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 显示器类型:7 Segment 数位数量:2 字符大小:7.8 mm x 14.22 mm 照明颜色:Red 波长:628 nm 共用管脚:Common Anode 工作电压:2.05 V 工作电流:20 mA 最大工作温度:+ 85 C 最小工作温度:- 35 C 封装:Tube |
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