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参数资料
| 型号： | MSD6100G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-226AA |
| 封装： | LEAD FREE, CASE 29-11, TO-92, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 47K |
| 代理商： | MSD6100G |
MSD6100
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
Breakdown Voltage (I(BR) = 100 mAdc)
V(BR)
100
Vdc
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA = 125°C)
IR
5.0
0.1
50
mAdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
0.55
0.67
0.75
0.7
0.82
1.1
Vdc
Capacitance (VR = 0)
C
1.5
pF
Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
4.0
ns
TYPICAL CHARACTERISTICS
100
0.2
0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6
0.8
1.0
1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10
20
30
40
50
1.0
0
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
C
D
,DIODE
CAP
ACIT
ANCE
(pF)
24
6
8
I F
,FOR
W
ARD
CURRENT
(mA)
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Capacitance
TA = 40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
I R
,REVERSE
CURRENT
(μ
A)
Curves Applicable to Each Anode
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