- 您现在的位置：买卖IC网 > PDF目录39913 > MSD6100RL1 (ON SEMICONDUCTOR) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 PDF资料下载
参数资料
| 型号： | MSD6100RL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 118K |
| 代理商： | MSD6100RL1 |
Dual Switching Diode
Common Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Recurrent Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
(Pulse Width = 10
sec)
IFM(surge)
500
mAdc
Power Dissipation @ TA = 25°C
Derate above 25
°C
PD(1)
625
5.0
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg(1)
–55 to +135
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
Breakdown Voltage
(I(BR) = 100 Adc)
V(BR)
100
—
Vdc
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA = 125°C)
IR
—
5.0
0.1
50
Adc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
0.55
0.67
0.75
0.7
0.82
1.1
Vdc
Capacitance
(VR = 0)
C
—
1.5
pF
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
—
4.0
ns
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,
Derate above 25
°C 8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
952
Publication Order Number:
MSD6100/D
MSD6100
CASE 29–11, STYLE 3
TO–92 (TO–226AA)
1
2
3
3 Cathode
Anode 1
2 Anode
相关PDF资料 |
PDF描述 |
|---|---|
| MSD6100RLRP | 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| MSD6100RLRF | 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| MSD6150RLRE | 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| MSD6150RLRA | 2 ELEMENT, SILICON, SIGNAL DIODE, TO-92 |
| MSD75-12 | 3 PHASE, 1200 V, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MSD6100RLRA | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MSD6100RLRAG | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MSD6101 | 制造商:Motorola Inc 功能描述: |
| MSD611 | 制造商:CONNOR-WINFIELD 制造商全称:Connor-Winfield Corporation 功能描述:LEADLESS SURFACE MOUNT HCMOS CLOCK OSCILLATOR |
| MSD611-77.76M | 制造商:CONNOR-WINFIELD 制造商全称:Connor-Winfield Corporation 功能描述:LEADLESS SURFACE MOUNT HCMOS CLOCK OSCILLATOR |
发布紧急采购，3分钟左右您将得到回复。