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参数资料
| 型号： | MSG36A51 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SSSMINI6-F1, 6 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 56K |
| 代理商： | MSG36A51 |
Products and specifications are subject to change without notice. Please ask for the latest Product Standards to guarantee the satisfaction of your product requirements.
Overview
Features
Applications
High breakdown voltage SiGe HBT
for general RF use
Excellent high-frequency performance and high breakdown voltage have been achieved by using the 0.25m SiGe HBT.
The products are suitable for VCO oscillator/buffer amplifier, TV tuner LNA and other RF applications,
where improved electrical properties such as power consumption, noise figures and gain are desired.
In addition, the compact body can drastically reduce the size of a handset or instrument.
Cut-off frequency fT = 20 GHz, operation breakdown voltage BVce-on = 6 V,
collector output capacitance = half of conventional products.
Noise figure NF = 0.9 dB, power gain PG =16 dB
at frequency of 1 GHz.
Ultra-small packages of ML3-N2 (1.0×0.6×0.4mm)/
SSSMini6-F1 (1.0
×0.8×0.4mm).
VCO for cellular phones, PHS, wireless LANs, etc.
LNA for cellular phones, tuners, etc.
Strike a balance between high breakdown voltage and high cut-off frequency.
New
New publication, effective from 02 Aug. 2002
M00571AE
1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan
Tel. +81-75-951-8151
http://www.panasonic.co.jp/semicon/
1.0
×0.6×0.4mm
(1 chip)
1.0
×0.8×0.4mm
(2 chips)
--- Operation breakdown voltage vs cut-off frequency/noise figure ---
0
10
20
30
40
50
60
70
02
4
6
8
Si Bipolar
SiGe HBT
C
u
t-
o
ff
frequenc
y
(GHz)
Operation breakdown voltage ( V )
NEW SiGe HBT
More practical !!
Cut-off frequency
0.0
0.5
1.0
1.5
2.0
2.5
02
468
Si Bipolar
SiGe HBT
(dB)
NEW SiGe HBT
Noise figure
More practical !!
Noise
f
igur
e
Operation breakdown voltage ( V )
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