- 您现在的位置：买卖IC网 > PDF目录96086 > MSG43003 (PANASONIC CORP) SiGe, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MSG43003 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 0.60 X 1 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA MINIATURE, ML3-N2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 622K |
| 代理商： | MSG43003 |
Thank
you
for
browsing
our
datasheets.
This
product
is
not
available
for
the
renewal
of
our
product
lineup.
We
apologize
for
any
trouble
this
may
have
caused
you.
Thank
you
for
your
patience.
For
further
information,
please
contact
our
sales
offices.
Transistors
Publication date: November 2005
SJC00329BED
1
MSG43003
SiGe HBT type
For low-noise RF amplier
Features
Compatible between high breakdown voltage and high cutoff frequency
Low-noise, high-gain amplication
Suitable for high-density mounting and downsizing of the equipment for
Ultraminiature package 0.6 mm × 1.0 mm (height 0.39mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
9
V
Collector-emitter voltage (Base open)
VCEO
6
V
Emitter-base voltage (Collector open)
VEBO
1
V
Collector current
IC
100
mA
Collector power dissipation *
PC
100
mW
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Note) Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm ×
0.8 mm.
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, IB = 0
1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
1
A
Forward current transfer ratio
hFE
VCE = 3 V, IC = 10 mA
100
220
Transition frequency *
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
19
GHz
Forward transfer gain *
S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz
10.0
7.0
dB
Noise gure *
NF
VCE = 3 V, IC = 10 mA, f = 2 GHz
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.5
0.8
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Veried by random sampling
Unit: mm
1: Base
2: Emitter
3: Collector
ML3-N2 Package
0.60
±0.05
1.00±0.05
2
1
3
0.39+0.01
0.03
0.25±0.05
0.50
±0.05
0.65±0.01
0.15
±0.05
2
1
0.35
±0.01
0.05±0.03
0.05
±0.03
3
Marking Symbol: 5X
This product complies with the RoHS Directive (EU 2002/95/EC).
相关PDF资料 |
PDF描述 |
|---|---|
| MSG430D4 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MSG56BBA0LBF | RF SMALL SIGNAL TRANSISTOR |
| MSG56BBA | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MSIS95C13 | 5 TIMER(S), PROGRAMMABLE TIMER, PDIP40 |
| MSK3001 | 5.6 A, 100 V, 0.3 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MSG43004 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:SiGe HBT type For low-noise RF amplifier |
| MSGB39WP | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:HIGH EFF.RED/GREEN DUAL COLOR LAMP |
| MSGB48TA | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:RED/GREEN LAMP |
| MSGB51T | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:HIGH EFFICIENCY RED/GREEN BI-COLOR LAMP |
| MSGB51TAP | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:HIGH EFFICIENCY RED/GREEN DUAL COLOR LAMP |
发布紧急采购，3分钟左右您将得到回复。