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参数资料
| 型号： | MSG430D4 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 1 X 0.60 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA MINI, LEADLESS, ML3-N2, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 536K |
| 代理商： | MSG430D4 |
MSG430D4
2
SJC00340AED
PC T
a
TT
I
aa
C V
CE
h
CE
FE
hh I
C
fT
ff I
C
Cob V
CB
GP I
C
0
40
120
80
0
120
40
80
MSG430D4_PC-Ta
Collector
power
dissipation
P C
(mW)
Ambient temperature Ta (°C)
0
2
4
6
0
12
4
8
MSG430D4_IC-VCE
80 A
70 A
60 A
50 A
40 A
30 A
20 A
10 A
IB = 10 A step
Collector
current
I C
(mA)
Collector-emitter voltage VCE (V)
1
10
102
2
18
8
MSG430D4_fT-IC
VCE = 3 V
f = 2 GHz
Transition
frequency
f T
(GHz)
Collector current IC (mA)
0
2
4
6
1.08
1.24
1.12
1.16
1.20
MSG430D4_Cob-VCB
f = 1 MHz
Collector-base voltage VCB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
101
10
1
102
10
0
10
Collector current IC (mA)
Power
gain
G
P
(dB)
MSG430D4_GP-IC
VCE = 3 V
f = 2 GHz
S21e2 I
C
NF
C
I
C
S11 , S22
1
10
102
0
8
4
MSG430D4_S21e
2-I
C
VCE = 3 V
f = 2 GHz
Collector current IC (mA)
Forward
transfer
gain
S
21e
2
(dB
)
101
1
10
102
0
6
8
2
4
MSG430D4_NF-IC
VCE = 3 V
f = 2 GHz
Collector current IC (mA)
Noise
figure
NF
(dB
)
V
CE = 3 V
IC = 10 mA
MSG430D4_S11-S22
0.5
0
1.0
2.0
S11
S22
2.0
1.0
0.5
∞
0.3
1.0
3.0
102
1
101
10
102
0
120
160
40
80
MSG430D4_hFE-IC
VCE = 3 V
Forward
current
transfer
ratio
h FE
Collector current IC (mA)
This product complies with the RoHS Directive (EU 2002/95/EC).
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