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参数资料
| 型号： | MSG56BBA0LBF |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | RF SMALL SIGNAL TRANSISTOR |
| 封装： | 1 X 0.90 MM, 0.40 HEIGHT, LEADLESS, ML6-N6, 7 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 189K |
| 代理商： | MSG56BBA0LBF |
Absolute Maximum Ratings
Electrical characteristics Ta = 25
°C ± 3°C
Silicon Transistors
MSG55BBA0LBF/BBB0LBF
Low-noise RF Amplifier
Recommended Operating range
GHz
6
0.1
fin
Operating frequency range
°C
85
25
-25
T
a
Operating temperature range
V
3.6
2.8
2.2
V
CC*1
Operating supply voltage range
Typ.
Min.
Unit
Max.
Symbol
Parameter
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods transistors.
*1: Consumption current will be change, between the operating range of Vcc, with a fixed external resistor.
*2: Specifications are guaranteed by design. (Including the PCB loss )
*3: It is a condition of MSG56BBB0L. (Differ from MSG56BBA0LBF. )
Internally connected circuit
Externally connected circuit
Bias
LNA
1
23
4
5
6
7
GND
EMI
RFIN
RFOUT
Vcc
CONT
GND
-55 to 125
-40 to +85
125
30
9
3.8
Rating
MSG56BBB0LBF
MSG55BBA0LBF
°C
-55 to 125
Tstg
Storage temperature
°C
mW
mA
V
Unit
125
Tj
Junction temperature
60
PT
Total power dissipation
18
ICC
Supply current
3.8
VCC
Supply voltage
-40 to +85
Topr
Operating temperature
Rating
Symbol
Parameter
1.6
11.5
6.0
4.0
Typ.
10.3
4.0
3.0
Min.
MSG56BBB0LBF
2.2
8.0
5.2
Max.
MSG55BBA0LBF
dB
2.2
1.5
V
CC = 2.8 V , R_cont = 560 ,
f=5.2GHz
dB
10.5
9.8
V
CC = 2.8 V , R_cont = 560 ,
f=5.2GHz
mA
9.5
8.0
6.5
V
CC = 2.8 V , R_cont = 820
(1100
*3)
NF*2
Noise figure
PG*2
Power gain
mA
14.8
12.0
9.4
V
CC = 2.8 V , R_cont = 560
I
CC*2
Consumption
current
I
CC
Consumption
current
Typ.
Min.
Unit
Max.
Condition
Symbol
Parameter
1
23
4
5
6
7
GND
EMI
RFIN
RFOUT
Vcc
CONT
GND
RF out
Vcc
RF in
R_CONT
>1.0pF
> 1.0nH
0 to 6.2nH
(
≥ 0nH*3)
>1. 0nH
(
≥ 0nH*3)
> 1.0pF
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