参数资料
型号: MSICSE50120CA
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 整流器
英文描述: 50 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
封装: TO-258, 3 PIN
文件页数: 1/2页
文件大小: 47K
代理商: MSICSE50120CA
PRELIMINARY
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
SILICON CARBIDE
DUAL SCHOTTKY POWER RECTIFIER
T4-LDS-0105 Rev. 1 (091991)
Page 1 of 2
DEVICES
MSiCSE50120CC
MSiCSE50120CA
MSiCSE50120D
50A / 1200V
Silicon Carbide
Dual Schottky Rectifier
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRWM
1200
V
Surge Peak Reverse Voltage
VRSM
1200
V
DC Blocking Voltage
VDC
1200
V
Average Forward Current, 25°C
Io
50
Apk
Peak Surge Forward Current @ tp = 8.3ms, half
sinewave, Io = 0; VRM = 0
IFSM
150
Apk
Thermal Resistance, Junction to Case
Rθjc
°C/W
Thermal Resistance, Junction to Ambient
Rθja
°C/W
Operating Junction Temperature
Tj
-65°C to +225
°C
Storage Temperature
Tstg
-65°C to +225
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage*
IF = 10A, Tj = 25°C
IF = 25A, Tj = 25°C
IF = 50A, Tj = 25°C
VF
1.2
1.5
1.8
V
Reverse Current
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
IR
200
500
A
Junction Capacitance
VR = 0V
f = 1MHz
Cj
TBD
pF
* Pulse test: Pulse width 300 sec, Duty cycle 2%
Note:
1. Derate linearly @ tbd
TO-258
MSiCSE50120
1
2
3
CC – COMMON CATHODE
1
2
3
CA – COMMON ANODE
1
2
3
D - DOUBLER
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