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参数资料
| 型号： | MSK3001 |
| 厂商： | MS KENNEDY CORP |
| 元件分类： | JFETs |
| 英文描述： | 5.6 A, 100 V, 0.3 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CERAMIC, SIP-11 |
| 文件页数： | 2/5页 |
| 文件大小： | 131K |
| 代理商： | MSK3001 |
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Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q2,Q4,Q6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
91mJ
210mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
200°C MAX
Single Pulse Avalanche Energy
(Q1,Q3,Q5)
(Q2,Q4,Q6)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds Lead Only)
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
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○
○○○○○○○
○
○○○○○○○
TJ
TST
TC
TLD
100V MAX
±20V MAX
5.6A MAX
22A MAX
6°C/W
○○○○○○○○○○
VGS=0 ID=0.25mA (All Transistors)
VDS=100V VGS=0V (Q1,Q3,Q5)
VDS=-100V VGS=0V (Q2,Q4,Q6)
VGS=±20V VDS=0 (All Transistors)
VDS=VGS ID=250μA (Q1,Q3,Q5)
VDS=VGS ID=250μA (Q2,Q4,Q6)
VGS=10V ID=5.6A (Q1,Q3,Q5)
VGS=-10V ID=-3.4A (Q2,Q4,Q6)
VGS=10V ID=5.6A (Q1,Q3,Q5)
VGS=10V ID=-3.4A (Q2,Q4,Q6)
VDS=25V ID=5.7A (Q1,Q3,Q5)
VDS=-50V ID=-3.4A (Q2,Q4,Q6)
ID=5.7A
VDS=80V
VGS=10V
VDD=50V
ID=5.7A
RG=22Ω
RD=8.6Ω
VGS=0V
VDS=25V
f=1MHz
ID=-6.8A
VDS=-80V
VGS=-10V
VDD=-50V
ID=-6.8A
RG=18Ω
RD=7.1Ω
VGS=0V
VDS=-25V
f=1MHz
IS=5.5A VGS=0V (Q1,Q3,Q5)
IS=-5.6A VGS=0V (Q2,Q4,Q6)
IS=5.7A di/dt=100A/μS (Q1,Q3,Q5)
IS=-6.8A di/dt=100A/μS (Q2,Q4,Q6)
IS=5.7A di/dt=100A/μS (Q1,Q3,Q5)
IS=-6.8A di/dt=100A/μS (Q2,Q4,Q6)
Parameter
Units
MSK3001
Test Conditions
V
μA
nA
V
Ω
S
nC
nS
pF
nC
nS
pF
V
nS
μC
Min.
100
-
2.0
-2.0
-
2.7
1.5
-
Typ.
-
0.18
0.37
-
4.5
23
32
23
330
92
54
-
9.6
29
21
25
390
170
45
1.3
-1.6
99
100
0.39
0.33
Max.
-
25
-100
±100
4.0
-4.0
0.30
0.75
0.21
0.60
-
25
4.8
11
-
18
3.0
9.0
-
150
200
0.58
0.66
ELECTRICAL SPECIFICATIONS
2
1
3
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
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2
Rev. C 7/10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSK3002 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:H-BRIDGE MOSFET POWER MODULE |
| MSK3003 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THREE PHASE BRIDGE MOSFET POWER MODULE |
| MSK3004 | 制造商:MSK 制造商全称:M.S. Kennedy Corporation 功能描述:H-BRIDGE MOSFET POWER MODULE |
| MSK3013 | 制造商:MSK 制造商全称:M.S. Kennedy Corporation 功能描述:QUAD N-CHANNEL MOSFET POWER MODULE |
| MSK3014 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:H-BRIDGE MOSFET POWER MODULE |
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