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参数资料
| 型号： | MSK3014 |
| 厂商： | MS KENNEDY CORP |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 100 V, 0.2 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CERAMIC, SIP-12 |
| 文件页数： | 2/5页 |
| 文件大小： | 141K |
| 代理商： | MSK3014 |
VGS=0 ID=0.25mA (All Transistors)
VDS=100V VGS=0V (Q2,Q3)
VDS=-100V VGS=0V (Q1,Q4)
VGS=±20V VDS=0 (All Transistors)
VDS=VGS ID=250μA (Q2,Q3)
VDS=VGS ID=250μA (Q1,Q4)
VGS=10V ID=9.0A (Q2,Q3)
VGS=-10V ID=-8.4A (Q1,Q4)
VGS=10V ID=9.0A (Q2,Q3)
VGS=10V ID=-8.4A (Q1,Q4)
VDS=50V ID=9.0A (Q2,Q3)
VDS=-50V ID=-8.4A (Q1,Q4)
ID=9.0A
VDS=80V
VGS=10V
VDD=50V
ID=9.0A
RG=12Ω
RD=5.5Ω
VGS=0V
VDS=25V
f=1.0MHz
ID=-8.4A
VDS=-80V
VGS=-10V
VDD=-50V
ID=-8.4A
RG=9.1Ω
RD=6.2Ω
VGS=0V
VDS=-25V
f=1.0MHz
IS=9.0A VGS=0V (Q2,Q3)
IS=-8.4A VGS=0V (Q1,Q4)
IS=9.0A di/dt=100A/μS (Q2,Q3)
IS=-8.4A di/dt=100A/μS (Q1,Q4)
IS=9.0A di/dt=100A/μS (Q2,Q3)
IS=-8.4A di/dt=100A/μS (Q1,Q4)
ABSOLUTE MAXIMUM RATINGS
1
2
3
4
Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q2,Q3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
Parameter
Units
MSK3014
Test Conditions
V
μA
nA
V
Ω
S
nC
nS
pF
nC
nS
pF
V
nS
μC
Min.
100
-
2.0
-
6.4
3.2
-
Typ.
-
6.4
27
37
25
640
160
88
-
15
58
45
46
760
260
170
1.3
-1.6
130
650
Max.
-
25
-25
±100
4.0
0.20
0.28
0.11
0.20
-
44
6.2
21
-
58
8.3
32
-
190
970
ELECTRICAL SPECIFICATIONS
2
1
3
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
4
Rev. D 7/10
2
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Single Pulse Avalanche Energy
(Q1,Q4)
(Q2,Q3)
JunctionTemperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds Lead Only)
Thermal Resistance (Junction to Case)
P-Channel @ 25°C
P-Channel @ 125°C
N-Channel @ 25°C
N-Channel @ 125°C
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TJ
TST
TC
TLD
RTH-JC
+175°C MAX
-55°C to +150°C
-55°C to +125°C
200°C MAX
5.2°C/W
8.0°C/W
6.0°C/W
9.1°C/W
VDSS
VDGDR
VGS
ID
IDM
100V MAX
±20V MAX
10A MAX
25A MAX
7.9mJ
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