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参数资料
| 型号： | MSK3017 |
| 厂商： | MS KENNEDY CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 200 V, 0.09 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CERAMIC, SIP-21 |
| 文件页数： | 2/5页 |
| 文件大小： | 131K |
| 代理商： | MSK3017 |
Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Body Diode
1
2
3
4
1000 mJ
+150°C MAX
-55°C to +150°C
-55°C to +125°C
200°C MAX
Single Pulse Avalanche Energy
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds Lead Only)
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)@25°C
Thermal Resistance
(Junction to Case)@125°C
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
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○
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○
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○
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○
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TJ
TST
TC
TLD
200V MAX
±20V MAX
30A MAX
46A MAX
1.0°C/W
1.6°C/W
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VGS=0 ID=0.25mA
VDS=200V VGS=0V
VGS=±20V VDS=0
VDS=VGS ID=250μA
VGS=10V ID = 30A
VGS=10V ID=30A
VDS=50V ID=30A
ID = 30A
VDS=160V
VGS = 10V
VDD=100V
ID = 30A
RG = 4.3
Ω
RD = 2.1
Ω
VGS=0V
VDS=25V
f=1MHz
IS=30 A VGS=0V
IS=30 A di/dt=100A/μS
Parameter
Units
MSK3017
Test Conditions
V
μA
nA
V
Ω
S
nC
nS
pF
V
nS
μC
Min.
200
-
2.0
-
24
-
Typ.
-
23
120
100
94
5200
1200
310
1.8
390
4.8
Max.
-
250
±100
4.0
0.09
0.06
-
230
42
110
-
590
7.2
ELECTRICAL SPECIFICATIONS
2
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
4
2
Rev. A 7/10
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1
3
1
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