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参数资料
| 型号： | MSK3020 |
| 厂商： | MS KENNEDY CORP |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 100 V, 0.26 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CERAMIC, SIP-12 |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 代理商： | MSK3020 |
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance
but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4TA = 25°C unless otherwise specified.
NOTES:
2
Rev. C 7/10
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Test Conditions 4
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance
2
Drain-Source on Resistance
3
Forward Transconductance
1
N-CHANNEL (Q2, Q3)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
IS = 14A VGS = 0V (Q2, Q3)
IS = -14A VGS = 0V (Q1, Q4)
IS = 14A di/dt = 100A/μS (Q2, Q3)
IS = -8.4A di/dt = 100A/μS (Q1, Q4)
IS = 14A di/dt = 100A/μS (Q2, Q3)
IS = -8.4A di/dt = 100A/μS (Q1, Q4)
VGS = 0V
VDS = -25V
f = 1 MHz
VDD = -50V
ID = -8.4A
RG = 9.1Ω
RD = 6.2Ω
ID = -8.4A
VDS = -80V
VGS = -10V
VGS = 10V ID = 14A
VGS = 0V
VDS = 25V
f = 1 MHz
VDD = 50V
ID = 14A
RG = 12Ω
RD = 3.5Ω
ID = 14A
VDS = 80V
VGS = 10V
VGS = 0
ID = 0.25 mA (All Transistors)
VGS = 0
VDS = 100V, (Q2, Q3)
VDS = 100V VGS = 0V, (Q2, Q3)
VDS = -100V
VGS = 0V, (Q1, Q4)
VGS = ±20V
VDS = 0V (All Transistors)
VDS = VGS
ID = 250 μA (Q2, Q3)
VDS = VGS
ID = 250 μA (Q1, Q4)
VGS = 10V
ID = 8.4A (Q2, Q3)
VGS = -10V
ID = -8.4A (Q1, Q4)
VGS = 10V
ID = 8.4A (Q2, Q3)
VGS = -10V
ID = -8.4A (Q1, Q4)
VDS = 50V
ID = 8.4A (Q2, Q3)
VDS = -50V
ID = -8.4A (Q1, Q4)
100
-
2.0
-2.0
-
4.7
3.2
-
1390
-
9.5
42
22
25
700
320
83
9
-
25
-25
±100
4.0
-4.0
0.26
0.31
0.16
0.20
-
26
5.5
11
-
1540
-
2.5
-1.6
150
47
0.85
650
-
310
71
1.2
970
V
nS
μC
nC
-
15
58
45
46
760
260
170
58
8.3
32
-
nC
nS
pF
V
μA
nA
V
Ω
S
nC
nS
pF
r
Units
Typ.
Max.
Min.
MSK 3020
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Sense Current-Continuous
Sense Current Peak
Single Pulse Avalanche Energy
(Q1,Q4)
(Q2,Q3)
JunctionTemperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds Lead Only)
Thermal Resistance (Junction to Case)
P-Channel @ 25°C
P-Channel @ 125°C
N-Channel @ 25°C
N-Channel @ 125°C
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TJ
TST
TC
TLD
RTH-JC
7.9mJ
69mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
200°C MAX
5.2°C/W
8.0°C/W
3.3°C/W
5.1°C/W
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VDSS
VDGDR
VGS
ID
IDM
IM
IMM
100V MAX
±20V MAX
10A MAX
25A MAX
13mA MAX
33mA MAX
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