参数资料
型号: MSK4363H
厂商: Electronic Theatre Controls, Inc.
英文描述: 10 AMP, 75V, 3 PHASE MOSFET BRUSHLESS MOTOR CONTROLLER
中文描述: 10安培,75V的,3相MOSFET的无刷电机控制器
文件页数: 2/7页
文件大小: 256K
代理商: MSK4363H
POWER SUPPLY REQUIREMENTS
+Vcc
-Vcc
PWM
Free Running Frequency
CONTROL
Transconductance
Current Monitor
HALL INPUTS
Low Level Input Voltage
High Level Input Voltage
ERROR AMP
Input Voltage Range
Slew Rate
Output Voltage Swing
Gain Bandwidth Product
Large Signal Voltage Gain
75V
±13.5V
+16V
-18V
10A
20A
High Voltage Supply
Current Command Input
Continuous Output Current
Peak Output Current
@ +15V
@ -15V
±8 Amps Output
±8 Amps Output
mA
mA
KHz
Amp/Volt
V/Amp
mAmp
mAmp
Volts
Volts
Volts
V/μSec
Volts
MHz
V/mV
ABSOLUTE MAXIMUM RATINGS
V+
V
IN
+Vcc
-Vcc
I
OUT
I
PK
3.1°C/W
-65°C to +150°C
+300°C
-55°C to +125°C
+150°C
θ
JC
T
ST
T
LD
T
C
T
J
Parameter
ELECTRICAL SPECIFICATIONS
Units
Max.
85
35
28
2.2
0.55
±35.0
-
0.8
-
-
-
-
-
-
MSK 4363
Typ.
60
16
25
2
0.5
±5.0
-
-
-
±12
8
±13
6.5
275
Test Conditions
Min.
-
-
22
1.8
0.45
-
-
-
3.0
±11
6.5
±12
-
175
Thermal Resistance
Storage Temperature Range
Lead Temperature Range
(10 Seconds)
Case Operating Temperature
Junction Temperature
All Ratings: Tc=+25°C Unless Otherwise Specified
2
Rev. G 8/01
Max.
85
35
26.5
2.1
0.55
±25.0
±50.0
0.8
-
-
-
-
-
-
MSK 4363H
Typ.
Min.
60
16
25
2
0.5
±5.0
-
-
-
±12
8
±13
6.5
275
-
-
23.5
1.9
0.45
-
-
-
3.0
±11
6.5
±12
-
175
1,2,3
1,2,3
4,5,6
4,5,6
4,5,6
4
5,6
-
-
-
-
-
-
-
NOTES:
1
Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
Subgroups 5 and 6 testing available upon request.
Subgroup 1, 4 T
A
= T
C
= +25°C
2, 5 T
A
= T
C
= +125°C
3, 6 T
A
= T
C
= -55°C
This is to be used for MOSFET thermal calculation only.
Measurements do not include offset current at 0V current command.
2
3
4
5
6
7
3
2
nSec
nSec
μAmps
Volts
Volts
Volts
nSec
μSec
OUTPUT
Rise Time
Fall Time
Leakage Current
Voltage Drop Across Bridge (1 Upper and 1 Lower)
Voltage Drop Across Bridge (1 Upper and 1 Lower)
Drain-Source On Resistance (Each MOSFET)
Diode VSD
trr
Dead Time
1
@ 64V, +150°C Junction
@ 10 Amps
@10Amps, +150°C
Junction
@ 10 Amps, 150°C Junction
@ 10 Amps, Each FET
IF=10 Amps, di/dt=100A/μS
-
-
750
0.3
0.6
0.026
2.6
-
-
100
100
-
-
-
-
-
280
2
-
-
-
-
-
-
-
-
-
100
100
-
-
-
-
-
280
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
750
0.3
0.6
0.026
2.6
-
-
7
Group A
Subgroup
4
5
7
6
1
1
1
1
1
1
1
1
1
1
1
1
@ 0 Volts Command
Output Offset
1
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