参数资料
型号: MSM5116400D-70SJ
厂商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
中文描述: 4194304字× 4位动态随机存储器:快速页面模式型
文件页数: 8/14页
文件大小: 172K
代理商: MSM5116400D-70SJ
MSM5116400D
8/14
Notes:
1.
A start-up delay of 200
m
s is required after power-up, followed by a minimum of eight initialization
cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved.
2.
The AC characteristics assume t
T
= 5ns.
3.
V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring input timing signals. Transition times
(t
T
) are measured between V
IH
and V
IL
.
4.
This parameter is measured with a load circuit equivalent to 2 TTL load and 100pF.
5.
Operation within the t
RCD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RCD
(Max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(Max.)
limit, then the access time is controlled by t
CAC
.
6.
Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RAD
(Max.) is specified as a reference point only. If t
RAD
is greater than the specified t
RAD
(Max.)
limit, then the access time is controlled by t
AA
.
7.
t
OFF
(Max.) and t
OEZ
(Max.) define the time at which the output achieved the open circuit condition
and are not referenced to output voltage levels.
8.
t
RCH
or t
RRH
must be satisfied for a read cycle.
9.
t
WCS
, t
CWD
, t
RWD
, t
AWD
and t
CPWD
are not restrictive operating parameters. They are included in the
data sheet as electrical characteristics only. If t
WCS
3
t
WCS
(Min.), then the cycle is an early write
cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If t
CWD
3
t
CWD
(Min.), t
RWD
3
t
RWD
(Min.), t
AWD
3
t
AWD
(Min.) and t
CPWD
3
t
CPWD
(Min.), then the cycle is a
read modify write cycle and data out will contain data read from the selected cell; if neither of the
above sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and to the WE
leading edge in an OE control write cycle, or a read modify write cycle.
相关PDF资料
PDF描述
MSM5116400D-70TS-K 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5117800F 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5117800F-50 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5117800F-60 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5117800F-70 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
相关代理商/技术参数
参数描述
MSM5116400D-70TS-K 制造商:OKI 制造商全称:OKI electronic componets 功能描述:4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5116400F 制造商:OKI 制造商全称:OKI electronic componets 功能描述:4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5116400F-50SJ 制造商:OKI 制造商全称:OKI electronic componets 功能描述:4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5116400F-50TS-K 制造商:OKI 制造商全称:OKI electronic componets 功能描述:4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5116400F-60SJ 制造商:OKI 制造商全称:OKI electronic componets 功能描述:4,194,304-Word 】 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE