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参数资料
| 型号： | MSM514262-80ZS |
| 厂商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 262,144-Word x 4-Bit Multiport DRAM |
| 中文描述： | 262,144字× 4位多端口内存 |
| 文件页数： | 7/45页 |
| 文件大小： | 507K |
| 代理商： | MSM514262-80ZS |
第1页第2页第3页第4页第5页第6页当前第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页
Semiconductor
MSM514262
7/45
AC Characteristics (2/3)
Parameter
Symbol
Note
Unit
ns
ns
ns
ns
55
0
0
—
45
0
0
—
45
0
0
—
ns
ns
20
—
0
10
—
0
10
—
0
ns
ns
ns
10
10
0
—
10
10
0
—
10
10
0
—
t
RWD
t
AWD
t
CWD
t
DZC
t
DZO
t
OEA
t
OEZ
t
OED
t
CSR
t
CHR
t
RPC
t
REF
t
WSR
t
RWH
t
FSR
t
RFH
t
FHR
t
FSC
t
CFH
Max.
—
—
—
—
Min.
0
15
Max.
—
—
—
—
Min.
0
15
Max.
—
—
—
—
Min.
0
15
-10
-80
-70
ns
ns
130
80
100
65
100
65
ms
ns
ns
ns
ns
ns
ns
ns
8
—
—
—
—
—
—
—
8
—
—
—
—
—
—
—
8
—
—
—
—
—
—
—
0
15
0
15
70
0
15
0
15
0
15
55
0
15
0
15
0
15
55
0
15
25
20
20
ns
ns
20
15
10
15
10
15
t
OEH
t
ROH
t
MS
t
MH
t
THS
t
THH
t
TLS
t
TLH
0
0
0
15
0
15
0
15
15
0
15
0
15
15
0
15
0
15
12
12
ns
ns
ns
ns
ns
ns
10k
10k
10k
t
RTH
80
65
60
ns
10k
10k
10k
t
ATH
30
30
25
ns
t
CTH
25
25
20
ns
t
ESR
t
REH
ns
ns
0
0
0
15
15
15
12
Column Address to
WE
Delay Time
CAS
to
WE
Delay Time
Data to
CAS
Delay Time
Data to
OE
Delay Time
Access Time from
OE
Output Buffer Turn-off Delay from
OE
OE
to Data Delay Time
CAS
Hold Time for
CAS
before
RAS
Cycle
RAS
Precharge to
CAS
Active Time
CAS
Set-up Time for
CAS
before
RAS
Cycle
SE
Set-up Time referenced to
RAS
SE
Hold Time referenced to
RAS
Write Per Bit Mask Data Hold Time
DT
High Set-up Time
Write Per Bit Mask Data Set-up Time
OE
Command Hold Time
RAS
Hold Time referenced to
OE
Refresh Period
WB
Set-up Time
RAS
to
WE
Delay Time
WB
Hold Time
DSF Set-up Time referenced to
RAS
DSF Hold Time referenced to
RAS
(1)
DSF Hold Time referenced to
RAS
(2)
DSF Set-up Time referenced to
CAS
DSF Hold Time referenced to
CAS
DT
Low Hold Time referenced to Column Address
(Real Time Read Transfer)
DT
Low Hold Time referenced to
CAS
(Real Time Read Transfer)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DT
High Hold Time
DT
Low Set-up Time
DT
Low Hold Time
DT
Low Hold Time referenced to
RAS
(Real Time Read Transfer)
ns
ns
t
DS
t
DH
ns
ns
70
0
55
0
55
0
t
DHR
t
WCS
11
11
Data Hold Time
Data Hold Time referenced to
RAS
Write Command Set-up Time
Data Set-up Time
12
20
10
10
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 4, 5, 6
9
7
相关PDF资料 |
PDF描述 |
|---|---|
| MSM514262-10JS | 262,144-Word x 4-Bit Multiport DRAM |
| MSM514262-70 | Oscillator; Oscillator Type:TCVCXO; Frequency:16.32MHz; Frequency Tolerance:+/- 0.5 ppm; Load Capacitance:15pF; Crystal Terminals:PCB Surface Mount; Supply Voltage:3.3V; Leaded Process Compatible:No |
| MSM514400D-60SJ | 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM514400D-50SJ | 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
| MSM514400D-50TS-K | 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MSM514265B | 制造商:OKI 制造商全称:OKI electronic componets 功能描述:262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE |
| MSM514265BSL | 制造商:OKI 制造商全称:OKI electronic componets 功能描述:262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE |
| MSM514265C | 制造商:OKI 制造商全称:OKI electronic componets 功能描述:262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM514265CSL | 制造商:OKI 制造商全称:OKI electronic componets 功能描述:262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM514265CSL-60 | 制造商:OK International 功能描述: 制造商:OK International 功能描述:256K X 16 EDO DRAM, 60 ns, PDSO40 |
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