参数资料
型号: MSM514400D-50TS-K
厂商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
中文描述: 1,048,576字× 4位动态随机存储器:快速页面模式型
文件页数: 8/17页
文件大小: 499K
代理商: MSM514400D-50TS-K
8/17
Semiconductor
MSM514400D/DL
Notes:
1. A start-up delay of 200
μ
s is required after power-up, followed by a minimum of eight
initialization cycles (
RAS
-only refresh or
CAS
before
RAS
refresh) before proper device
operation is achieved.
2. The AC characteristics assume t
T
= 5 ns.
3. V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring input timing signals.
Transition times (t
T
) are measured between V
IH
and V
IL
.
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the t
RCD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RCD
(Max.) is specified as a reference point only. If t
RCD
is greater than the specified
t
RCD
(Max.) limit, then the access time is controlled by t
CAC
.
6. Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RAD
(Max.) is specified as a reference point only. If t
RAD
is greater than the specified
t
RAD
(Max.) limit, then the access time is controlled by t
AA
.
7. t
OFF
(Max.) and t
OEZ
(Max.) define the time at which the output achieves the open
circuit condition and are not referenced to output voltage levels.
8. t
RCH
or t
RRH
must be satisfied for a read cycle.
9. t
WCS
, t
CWD
, t
RWD
, t
AWD
and t
CPWD
are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If t
WCS
t
WCS
(Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If t
CWD
t
CWD
(Min.) , t
RWD
t
RWD
(Min.),
t
AWD
t
AWD
(Min.) and t
CPWD
t
CPWD
(Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the
CAS
leading edge in an early write cycle, and
to the
WE
leading edge in an
OE
control write cycle, or a read modify write cycle.
11. The test mode is initiated by performing a
WE
and
CAS
before
RAS
refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 2-bit parallel test function. CA0 is not
used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high
level. If any internal bits are not equal, the DQ pin will indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a
RAS
-only refresh cycle or a
CAS
before
RAS
refresh cycle.
12. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specified value. These parameters should be specified in test mode cycle by adding the
above value to the specified value in this data sheet.
相关PDF资料
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MSM514400D-50ZS 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
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