参数资料
型号: MSM514900C
厂商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 512K×9 Dynamic RAM(512K×9动态RAM)
中文描述: 为512k × 9的动态随机存储器(为512k × 9动态内存)
文件页数: 5/11页
文件大小: 256K
代理商: MSM514900C
5/16
Semiconductor
MSM514900C/CSL
DC Characteristics
Notes:
1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
4. V
CC
– 0.2 V
V
IH
6.5 V, –1.0 V
V
IL
0.2 V.
5. SL version.
Parameter
Symbol
Condition
MSM514900
C/CSL-70
MSM514900
C/CSL-80
MSM514900
C/CSL-60
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
I
OH
= –5.0 mA
I
OL
= 4.2 mA
0 V
V
I
6.5 V;
All other pins not
under test = 0 V
DQ disable
0 V
V
O
5.5 V
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
RAS
,
CAS
cycling,
t
RC
= Min.
Average Power
Supply Current
(Operating)
RAS
,
CAS
= V
IH
RAS
,
CAS
V
CC
–0.2 V
Power Supply
Current (Standby)
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
Average Power
Supply Current
(
RAS
-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(
CAS
before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
Average Power
Supply Current
(
CAS
before
RAS
Self-Refresh)
CAS
before
RAS
RAS
= V
IL
,
CAS
cycling,
t
PC
= Min.
t
RC
= 125
m
s,
I
CC10
CAS
before
RAS
,
t
RAS
1
m
s
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
Min.
2.4
0
–10
–10
Max.
V
CC
0.4
10
10
130
2
1
130
5
130
120
300
200
Min.
2.4
0
–10
–10
Max.
V
CC
0.4
10
10
120
2
1
120
5
120
110
300
200
Min.
2.4
0
–10
–10
Max.
V
CC
0.4
10
10
140
2
1
140
5
140
130
300
200
Unit
V
V
m
A
m
A
mA
mA
mA
mA
mA
mA
m
A
m
A
Note
1, 2
1
1, 2
1
1, 2
1, 3
1, 4,
5
1, 5
RAS
cycling,
I
CCS
RAS
0.2 V,
CAS
0.2 V
300
300
300
m
A
1, 5
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