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参数资料
| 型号： | MSM518221A-25ZS |
| 厂商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 262,214-Word x 8-Bit Field Memory |
| 中文描述： | 262214字× 8位字段记忆 |
| 文件页数： | 10/17页 |
| 文件大小： | 200K |
| 代理商： | MSM518221A-25ZS |
Semiconductor
MSM518221A
10/16
Notes: 1.
Input signal reference levels for the parameter measurement are V
IH
= 3.0 V and V
IL
= 0 V. The transition time t
T
is defined to be a transition time that signal transfers
between V
IH
= 3.0 V and V
IL
= 0 V.
2.
AC measurements assume t
T
= 3 ns.
3.
Read address must have more than a 600 address delay than write address in every
cycle when asynchronous read/write is performed.
4.
Read must have more than a 600 address delay than write in order to read the data
written in a current series of write cycles which has been started at last write reset
cycle: this is called "new data read".
When read has less than a 70 address delay than write, the read data are the data
written in a previous series of write cycles which had been written before the last
write reset cycle: this is called "old data read".
5.
When the read address delay is between more than 71 and less than 599, read data
will be undetermined. However, normal write is achieved in this address condition.
6.
Outputs are measured with a load equivalent to 1 TTL load and 30 pF.
Output reference levels are V
OH
= 2.4 V and V
OL
= 0.8 V.
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| MSM518221A-30ZS | 262,214-Word x 8-Bit Field Memory |
| MSM518221A-40GS-K | 262,214-Word x 8-Bit Field Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSM518221A-30GS-K | 制造商:OKI 制造商全称:OKI electronic componets 功能描述:262,214-Word x 8-Bit Field Memory |
| MSM518221A-30J3 | 制造商:ROHM Semiconductor 功能描述: |
| MSM518221A-30J3-7 | 制造商:ROHM Semiconductor 功能描述: |
| MSM518221A-30JS | 制造商:ROHM Semiconductor 功能描述: |
| MSM518221A-30Z3 | 制造商:ROHM Semiconductor 功能描述: |
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