参数资料
型号: MSM51V16800BSL
厂商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
中文描述: 2097152字× 8位动态随机存储器:快速页面模式型
文件页数: 7/8页
文件大小: 95K
代理商: MSM51V16800BSL
359
Semiconductor
MSM51V16800B/BSL
AC Characteristics (2/2)
MSM51V16800
B/BSL-60
MSM51V16800
B/BSL-70
MSM51V16800
B/BSL-50
Write Command Pulse Width
OE
Command Hold Time
Write Command to
CAS
Lead Time
Data-in Set-up Time
Data-in Hold Time
OE
to Data-in Delay Time
Write Command to
RAS
Lead Time
CAS
to
WE
Delay Time
Column Address to
WE
Delay Time
RAS
to
WE
Delay Time
CAS
Precharge
WE
Delay Time
RAS
to
CAS
Hold Time (
CAS
before
RAS
)
WE
to
RAS
Precharge Time (
CAS
before
RAS
)
t
WRP
WE
Hold Time from
RAS
(
CAS
before
RAS
)
RAS
to
WE
Set-up Time (Test Mode)
RAS
to
WE
Hold Time (Test Mode)
RAS
Pulse Width
(
CAS
before
RAS
Self-Refresh)
RAS
Precharge Time
(
CAS
before
RAS
Self-Refresh)
CAS
Hold Time
(
CAS
before
RAS
Self-Refresh)
CAS
Active Delay Time from
RAS
Precharge
RAS
to
CAS
Set-up Time (
CAS
before
RAS
)
Write Command Hold Time
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
Write Command Set-up Time
t
WP
t
OEH
t
CWL
t
DS
t
DH
t
OED
t
RWL
t
CWD
t
AWD
t
RWD
t
CPWD
t
CHR
t
RPC
t
CSR
t
WCH
t
WCS
Min.
0
Max.
Parameter
Symbol
Unit Note
Min.
0
Max.
Min.
0
Max.
t
WRH
t
WTS
t
WTH
10
10
9
9
9
9
9
10
10
10
10
10
15
15
0
10
15
15
40
55
85
60
10
10
5
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
10
10
7
13
0
7
13
13
36
48
73
53
10
10
5
7
13
10
10
10
10
10
20
20
0
15
20
20
50
65
100
70
10
10
5
15
t
RASS
13
100
m
s
100
100
t
RPS
13
110
ns
90
130
t
CHS
13
–50
ns
–50
–50
相关PDF资料
PDF描述
MSM51V16805A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM51V16805B 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM51V16805BSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM521216 65,536-Word ×16-Bit CMOS STATIC RAM(64k字×16位静态RAM)
MSM521218 65,536-Word ×18-Bit CMOS STATIC RAM(64k字×18位静态RAM)
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