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参数资料
| 型号： | MSM98S |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 0.8m Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays |
| 中文描述： | 0.8混合3-V/5-V海盖茨和客户结构阵列 |
| 文件页数： | 9/23页 |
| 文件大小： | 96K |
| 代理商： | MSM98S |
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I
MSM38S/98S Data Sheet
I
7
OKI SEMICONDUCTOR
[1] Typical condition is V
DD
= 3.3 V and T
j
= 25° C for a typical process.
[2] RAM/ROM should be in power-down mode.
DC Characteristics
(V
DD
= 2.7 ~ 3.6 V, V
SS
= 0 V, T
j
= -40° C ~ +85° C)
Parameter
Symbol
Conditions
Rated Value
Typ
[1]
Unit
Min
Max
High-level input voltage
V
IH
V
IL
V
t+
V
t-
VT
CMOS input
0.7xV
DD
-0.5
–
V
DD
+0.5
0.3xV
DD
0.76xV
DD
–
V
Low-level input voltage
CMOS input
–
V
CMOS-level Schmitt Trigger input threshold
voltage
–
–
2
V
–
0.24xV
DD
0.1xV
DD
2.2
1
V
V
t+
- V
t-
1
–
V
High-level output voltage
V
OH
V
OL
I
IH
I
OH
= 1, 2, 4, 6, 8, 12 mA
I
OL
= 1, 2, 4, 6, 8, 12, 24 mA
V
IH
= V
DD
V
IH
= V
(100 k
pull down)
–
–
V
Low-level output voltage
–
–
0.4
V
High-level input current
–
0.01
1
μA
5
35
120
μA
Low-level input current
I
IL
V
IL
= V
SS
-1
-0.01
–
μA
V
IL
= V
SS
(100 k
pull up)
V
IL
= V
SS
(6 k
pull up)
V
OH
= V
DD
V
OL
= V
SS
V
OL
= V
SS
(100 k
pull up)
V
OL
= V
SS
(6 k
pull up)
Output open
V
IH
= V
DD
, V
IL
= V
SS
-120
-35
-5
μA
-2
-.55
-.120
mA
3-state output leakage current
IOZ
H
IOZ
L
–
0.01
1
μA
-1
-0.01
–
μA
-120
-35
-5
μA
-2
-.55
-.12
mA
Stand-by current
[2]
I
DDS
–
0.1
10
μA
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