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参数资料
| 型号： | MSP1N5774 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | UNIDIRECTIONAL, 14 ELEMENT, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, FP-14 |
| 文件页数： | 1/2页 |
| 文件大小： | 83K |
| 代理商： | MSP1N5774 |
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5774
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive
side of the power supply line and to ground (see figure 1). An external TVS diode may
be added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
14-PIN Ceramic
Flat Pack
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N5774 for a JANTX screen.
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20
μs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (t
p=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25
oC
500 mW Power Dissipation per Package @ 25
oC (Note 4)
Operating Junction Temperature range –65 to +150
oC
Storage Temperature range of –65 to +200
oC
14-PIN Ceramic Flat Pack
Weight 0.29 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
Carrier Tubes; 19 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max.; duty cycle <20%
NOTE 3: Derate at 2.4 mA/
oC above +25oC
NOTE 4: Derate at 4.0 mW/
oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
FORWARD
VOLTAGE
VF2
IF = 500 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY TIME
tfr
IF = 500 mA
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 200 mA
irr = 20 mA
RL = 100 ohms
PART
NUMBER
Vdc
μAdc
pF
ns
1N5774
1
1.5
0.1
8.0
40
20
NOTE 1: Pulsed: PW = 300 s +/- 50 s, duty cycle <2%, 90 s after leading edge.
Microsemi
Scottsdale Division
Page 1
Copyright
2006
12-13-2006 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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