参数资料
型号: MSP1N6472US
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装: HERMETICALLY SEALED, GLASS, D-5C, MELF-2
文件页数: 1/3页
文件大小: 132K
代理商: MSP1N6472US
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
5-15-2007 REV C
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6469US thru 1N6476US
1N6
469
US
1N6
476
US
DESCRIPTION
APPEARANCE
This surface mount series of industry recognized voidless-hermetically-sealed
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-
PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These
devices are also available in axial-leaded packages for thru-hole mounting by deleting
the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also
offers numerous other TVS products to meet higher and lower peak pulse power and
voltage ratings in both through-hole and surface-mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category I” metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/552 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6469, MSP6476, etc.
Axial-leaded equivalents are also available (see
separate data sheet for 1N6469 thru 1N6476)
Military and other high reliability transient protection
Extremely robust construction
Working Peak “Standoff” Voltage (V
WM) from 5.0 to
51.6 V
Available as 1500 W Peak Pulse Power (P
PP)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Square-end-cap terminals for easy mounting
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & Storage Temperature: -55oC to +175oC
Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 s
(also see Figures 1,2 and 4)
Impulse repetition rate (duty factor): 0.01%
Forward Surge Current: 130 Amps@ 8.33 ms one-
half sine wave
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at
100 Amps (pulsed)
Steady-State Power: 3.0 W @ T
A = 25
oC (see note
below and Figure 4)
Thermal Resistance Junction to End Cap: 20.0 oC/W
Solder Temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb)
finish.
MARKING: Body painted and part number, etc.
POLARITY: Cathode band
Tape & Reel option: Standard per EIA-481-B
Weight: 1100 mg
See package dimensions on last page
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.
Package “G”
(or “D-5C”)
相关PDF资料
PDF描述
MSP1N6628US 4 A, SILICON, RECTIFIER DIODE
MSP1N6627US 4 A, SILICON, RECTIFIER DIODE
MSP1N6630US 3 A, SILICON, RECTIFIER DIODE
MSP6624 1 A, SILICON, SIGNAL DIODE
JANTXV1N6625 1 A, SILICON, SIGNAL DIODE
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