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参数资料
| 型号： | MSP3V3HM3/89A |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | TVS 100W 3.3V UNIDIR MICRO-SMP |
| 标准包装： | 4,500 |
| 系列： | TransZorb®, eSMP™ |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 4.1V |
| 功率（瓦特）： | 100W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | MicroSMP |
| 供应商设备封装： | MicroSMP |
| 包装： | 带卷 (TR) |
MSP3V3, MSP5.0A
www.vishay.com
Vishay General Semiconductor
Surface Mount T RANS Z ORB? Transient Voltage Suppressors
FEATURES
eSMP ? Series
? Very low profile - typical height of 0.65 mm
? Ideal for automated placement
? Oxide planar chip junction
? Uni-directional polarity only
? Peak pulse power: 150 W (10/1000 μs)
Available
Top View
Bottom View
MicroSMP
? ESD capability: 15 kV (air), 8 kV (contact)
? Meets MSL level 1, per J-STD-020C, LF maximum peak of
260 °C
? AEC-Q101 qualified
PRIMARY CHARACTERISTICS
V WM 3.3 V to 5.0 V
V BR 4.1 V to 7.07 V
? Not recommended for PCB bottom side wave mounting
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
P PPM
T J max.
Polarity
Package
150 W
150 °C
Uni-directional
MicroSMP
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for protecting
sensitive equipment against transient overvoltages.
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
P PPM
I PPM
(1)(2)
(1)
150
See next table
W
A
Power dissipation
T M = 120 °C
P D
(2)
1.0
W
Power dissipation
Operating junction and storage temperature range
T A = 25 °C
P D (3)
T J , T STG
0.5
- 55 to + 150
W
°C
Notes
(1) Non-repetitive current pulse, per fig. 1
(2) Mounted on 6.0 mm x 6.0 mm copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Revision: 10-Dec-13
1
Document Number: 88486
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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