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参数资料
| 型号： | MSP430C1111IPW |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20 |
| 封装： | PLASTIC, TSSOP-20 |
| 文件页数： | 11/43页 |
| 文件大小： | 870K |
| 代理商： | MSP430C1111IPW |
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MSP430C11x1, MSP430F11x1A
MIXED SIGNAL MICROCONTROLLER
SLAS241I SEPTEMBER 1999 REVISED DECEMBER 2008
19
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
optional resistors, individually programmable with ROM code (see Note 1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R(opt1)
2.5
5
10
k
Ω
R(opt2)
3.8
7.7
15
k
Ω
R(opt3)
7.6
15
31
k
Ω
R(opt4)
11.5
23
46
k
Ω
R(opt5)
Resistors, individually programmable with ROM code, all port pins,
V
2 2 V/3 V
23
45
90
k
Ω
R(opt6)
Resistors, individually programmable with ROM code, all port pins,
values applicable for pulldown and pullup
VCC = 2.2 V/3 V
46
90
180
k
Ω
R(opt7)
70
140
280
k
Ω
R(opt8)
115
230
460
k
Ω
R(opt9)
160
320
640
k
Ω
R(opt10)
205
420
830
k
Ω
NOTE 1: Optional resistors Roptx for pulldown or pullup are not available in standard flash memory device MSP430F11x1A.
wake-up from low-power modes (LPMx)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t(LPM0)
VCC = 2.2 V/3 V
100
ns
t(LPM2)
VCC = 2.2 V/3 V
100
ns
f(MCLK) = 1 MHz,
VCC = 2.2 V/3 V
6
t(LPM3)
Delay time (see Note 1)
f(MCLK) = 2 MHz,
VCC = 2.2 V/3 V
6
μs
(LPM3)
Delay time (see Note 1)
f(MCLK) = 3 MHz,
VCC = 2.2 V/3 V
6
μ
f(MCLK) = 1 MHz,
VCC = 2.2 V/3 V
6
t(LPM4)
f(MCLK) = 2 MHz,
VCC = 2.2 V/3 V
6
μs
(LPM4)
f(MCLK) = 3 MHz,
VCC = 2.2 V/3 V
6
μ
NOTE 1: Parameter applicable only if DCOCLK is used for MCLK.
RAM
PARAMETER
MIN
TYP
MAX
UNIT
V(RAMh)
CPU halted (see Note 1)
1.6
V
NOTE 1: This parameter defines the minimum supply voltage VCC when the data in the program memory RAM remains unchanged. No program
execution should happen during this supply voltage condition.
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