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参数资料
| 型号： | MSP430C315IDL |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, MROM, 3.3 MHz, RISC MICROCONTROLLER, PDSO56 |
| 封装： | PLASTIC, SSOP-56 |
| 文件页数： | 15/31页 |
| 文件大小： | 346K |
| 代理商： | MSP430C315IDL |
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MSP430x31x
MIXED SIGNAL MICROCONTROLLERS
SLAS165D FEBRUARY 1998 REVISED APRIL 2000
22
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
JTAG, program memory
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
f
TCK frequency
VCC = 3 V
DC
5
MHz
f(TCK)
JTAG/Test
TCK frequency
VCC = 5 V
DC
10
MHz
R(TEST)
JTAG/Test
Pullup resistors on TMS, TCK, TDI
(see Note 15)
VCC = 3 V/ 5 V
25
60
90
k
Ω
Fuse blow voltage, C versions (see Note 15)
VCC = 3 V/ 5 V
5.5
6
V(FB)
JTAG/Fuse (see Note 16)
Fuse blow voltage, E/P versions
(see Note 17)
VCC = 3 V/ 5 V
11
12
V
I(FB)
JTAG/Fuse (see Note 16)
Supply current on TDI/VPP to blow fuse
100
mA
t(FB)
Time to blow the fuse
1
ms
V
P313, E313
Programming voltage, applied to TDI/VPP
11
11.5
13
V
V(PP)
P315(S), E315
Programming voltage, applied to TDI/VPP
12
12.5
13
V
I(PP)
Current from programming voltage source
70
mA
t(pps)
EPROM (E) and OTP(P)
versions only
Programming time, single pulse
5
ms
t(ppf)
versions only
(see Note 18)
Programming time, fast algorithm
100
μs
Pn
(see Note 18)
Pulses for successful programming
4
100
Pulses
t(erase)
EPROM (E)
Erase time wave length 2537 at 15 Ws/cm2
(UV lamp of 12 mW/ cm2)
30
min
EPROM (E)
Write/erase cycles
1000
cycles
Data retention TJ < 55°C
10
years
NOTES: 15. The TMS and TCK pullup resistors are implemented in all ROM(C) and EPROM(E) versions.
16. Once the JTAG fuse is blown no further access to the MSP430 JTAG/test feature is possible.
17. The voltage supply to blow the JTAG fuse is applied to TDI/VPP pin when fuse blowing is desired.
18. Refer to the Recommended Operating Conditions for the correct VCC during programing.
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