参数资料
型号: MSP430F1101AIDWR
厂商: TEXAS INSTRUMENTS INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20
封装: GREEN, PLASTIC, SOIC-20
文件页数: 6/43页
文件大小: 869K
代理商: MSP430F1101AIDWR
MSP430C11x1, MSP430F11x1A
MIXED SIGNAL MICROCONTROLLER
SLAS241I SEPTEMBER 1999 REVISED DECEMBER 2008
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings
Voltage applied at VCC to VSS
0.3 V to 4.1 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage applied to any pin (see Note)
0.3 V to VCC+0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode current at any device terminal
±2 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, Tstg (unprogrammed device)
55
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, Tstg (programmed device)
40
°C to 85°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE: All voltages referenced to VSS. The JTAG fuse-blow voltage, VFB, is allowed to exceed the absolute maximum rating. The voltage is applied
to the TEST pin when blowing the JTAG fuse.
recommended operating conditions
MIN
NOM
MAX
UNITS
MSP430C11x1
18
36
Supply voltage during program execution V
(see Note 1)
MSP430C11x1
1.8
3.6
V
Supply voltage during program execution, VCC (see Note 1)
MSP430F11x1A
1.8
3.6
V
Supply voltage during program/erase flash memory, VCC
MSP430F11x1A
2.7
3.6
V
Supply voltage, VSS
0
V
Operating free-air temperature range, TA
MSP430x11x1(A)
40
85
°C
LFXT1
t l f
f
LF mode selected, XTS=0
Watch crystal
32 768
Hz
LFXT1 crystal frequency, f(LFXT1)
(see Notes 1 and 2)
XT1 mode selected XTS 1
Ceramic resonator
450
8000
kHz
(see Notes 1 and 2)
XT1 mode selected, XTS=1
Crystal
1000
8000
kHz
Processor frequency f
(MCLK signal)
VCC = 1.8 V,
MSP430x11x1(A)
dc
4.15
MHz
Processor frequency f(system) (MCLK signal)
VCC = 3.6 V,
MSP430x11x1(A)
dc
8
MHz
NOTES:
1. In LF mode, the LFXT1 oscillator requires a watch crystal. A 5.1M
Ω resistor from XOUT to VSS is recommended when
VCC < 2.5 V. In XT1 mode, the LFXT1 and XT2 oscillators accept a ceramic resonator or crystal up to 4.15MHz at VCC ≥ 2.2 V. In
XT1 mode, the LFXT1 and XT2 oscillators accept a ceramic resonator or crystal up to 8 MHz at VCC ≥ 2.8 V.
2. In LF mode, the LFXT1 oscillator requires a watch crystal. In XT1 mode, LFXT1 accepts a ceramic resonator or a crystal.
1.8 V
3.6 V
2.7 V 3 V
4.15 MHz
8.0 MHz
Supply Voltage V
Supply voltage range, ’F11x1A,
during flash memory programming
Supply voltage range,
’x11x1(A), during
program execution
NOTE: Minimum processor frequency is defined by system clock. Flash
program or erase operations require a minimum VCC of 2.7 V.
fSYSTEM (MHz)
Figure 1. Frequency vs Supply Voltage
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