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参数资料
型号： MSP430F1101IPWR
厂商： TEXAS INSTRUMENTS INC
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20
封装： PLASTIC, TSSOP-20
文件页数： 18/43页
文件大小： 869K
代理商： MSP430F1101IPWR
MSP430C11x1, MSP430F11x1A
MIXED SIGNAL MICROCONTROLLER
SLAS241I SEPTEMBER 1999 REVISED DECEMBER 2008
25
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and erase supply voltage
2.7
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from VCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
See Note 1
2.7 V/ 3.6 V
4
ms
tCMErase
Cumulative mass erase time
See Note 2
2.7 V/ 3.6 V
200
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for first byte or word
30
tBlock, 1-63
Block program time for each additional byte or word
See Note 3
21
t
tBlock, End
Block program end-sequence wait time
See Note 3
6
tFTG
tMass Erase
Mass erase time
5297
tSeg Erase
Segment erase time
4819
NOTES:
1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297x1/fFTG,max = 5297x1/476kHz). To
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the Flash Controller’s state machine (tFTG = 1/fFTG).
JTAG interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
f
TCK input frequency
see Note 1
2.2 V
0
5
MHz
fTCK
TCK input frequency
see Note 1
3 V
0
10
MHz
RInternal
Internal pulldown resistance on TEST
see Note 2
2.2 V/ 3 V
25
60
90
k
Ω
NOTES:
1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TEST pull-down resistor implemented in all versions.
JTAG fuse (see Note 1)
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
Voltage level on TEST for fuse blow (’C11x1)
3.5
3.9
V
VFB
Voltage level on TEST for fuse blow (’F11x1A)
6
7
V
IFB
Supply current into TEST during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTES:
1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation (F versions only) features is possible. The JTAG
block is switched to bypass mode.
相关PDF资料
PDF描述
MSP430F1121IDWR 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20
MSP430C1101 16-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PQCC24
MSP430F1121AIDW 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20
MSP430F1121IPW 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20
MSP430F1132IDWR 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20
相关代理商/技术参数
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MSP430F110IDW 功能描述:IC MCU 16BIT 1KB FLASH 20-SOIC RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:MSP430x1xx 产品培训模块:8-bit PIC® Microcontroller Portfolio 标准包装:91 系列:PIC® XLP™ mTouch™ 16F 核心处理器:PIC 芯体尺寸:8-位 速度:32MHz 连通性:I²C，LIN，SPI，UART/USART 外围设备:欠压检测/复位，POR，PWM，WDT 输入/输出数:11 程序存储器容量:14KB（8K x 14） 程序存储器类型:闪存 EEPROM 大小:256 x 8 RAM 容量:1K x 8 电压 - 电源 (Vcc/Vdd):1.8 V ~ 3.6 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:16-VQFN 裸露焊盘 包装:管件
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