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参数资料
型号： MSP430F1132IDWR
厂商： TEXAS INSTRUMENTS INC
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PDSO20
封装： PLASTIC, SO-20
文件页数： 22/52页
文件大小： 1174K
代理商： MSP430F1132IDWR
MSP430x11x2, MSP430x12x2
MIXED SIGNAL MICROCONTROLLER
SLAS361D JANUARY 2002 REVISED AUGUST 2004
29
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted) (continued)
Flash Memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
VCC(PGM/
ERASE)
Program and Erase supply voltage
2.7
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from VCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
see Note 1
2.7 V/ 3.6 V
4
ms
tCMErase
Cumulative mass erase time
see Note 2
2.7 V/ 3.6 V
200
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for 1st byte or word
30
tBlock, 1-63
Block program time for each additional byte or word
21
tBlock, End
Block program end-sequence wait time
see Note 3
6
tFTG
tMass Erase
Mass erase time
5297
tSeg Erase
Segment erase time
4819
NOTES:
1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297x1/fFTG,max = 5297x1/476kHz). To
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the Flash Controller’s state machine; tFTG = 1/fFTG.
JTAG Interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
2.2 V
0
5
MHz
fTCK
TCK input frequency
see Note 1
3 V
0
10
MHz
RInternal
Internal pull-down resistance on TEST
see Note 2
2.2 V/ 3 V
25
60
90
k
NOTES:
1. fTCK may be restricted to meet the timing requirements of the module selected.
2. TEST pull-down resistor implemented in all Flash versions.
JTAG Fuse (see Note 1)
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
VFB
Voltage level on TEST for fuse-blow
6
7
V
IFB
Supply current into TEST during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTES:
1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched
to bypass mode.
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相关代理商/技术参数
参数描述
MSP430F1132IPW 功能描述:16位微控制器 - MCU 8kB Flash 256B RAM 10bit ADC RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F1132IPWR 功能描述:16位微控制器 - MCU 8kB Flash 256B RAM 10bit ADC RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F1132IRHB 制造商:TI 制造商全称:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
MSP430F1132IRHBR 功能描述:16位微控制器 - MCU 16bit UltLoPwr 8kB Flash 256B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F1132IRHBT 功能描述:16位微控制器 - MCU 16bit UltLoPwr 8kB Flash 256B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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