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参数资料
型号： MSP430F2002TRSA
厂商： TEXAS INSTRUMENTS INC
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQCC16
封装： PLASTIC, QFN-16
文件页数： 42/92页
文件大小： 1672K
代理商： MSP430F2002TRSA
MSP430F20x3
MSP430F20x2
MSP430F20x1
www.ti.com
SLAS491H
– AUGUST 2005 – REVISED AUGUST 2011
SD16_A, Temperature Sensor
(1) (MSP430F20x3)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
TCSensor
Sensor temperature coefficient
1.18
1.32
1.46 mV/
°C
VOffset,Sensor
Sensor offset voltage
-100
100
mV
Temperature sensor voltage at
435
475
515
TA = 85°C
Temperature sensor voltage at
VSensor
Sensor output voltage(2)
3 V
355
395
435
mV
TA = 25°C
Temperature sensor voltage at
320
360
400
TA = 0°C
(1)
Values are not based on calculations using TCSensor or VOffset,sensor but on measurements.
(2)
The following formula can be used to calculate the temperature sensor output voltage:
VSensor,typ = TCSensor ( 273 + T [°C] ) + VOffset,sensor [mV] or
VSensor,typ = TCSensor T [°C] + VSensor(TA = 0°C) [mV]
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER
VCC
MIN
TYP
MAX
UNIT
CONDITIONS
VCC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time(1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
(2)
30
tFTG
tBlock, 0
Block program time for first byte or word
(2)
25
tFTG
Block program time for each additional byte or
tBlock, 1-63
(2)
18
tFTG
word
tBlock, End
Block program end-sequence wait time
(2)
6
tFTG
tMass Erase
Mass erase time
(2)
10593
tFTG
tSeg Erase
Segment erase time
(2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the Flash Controller
's state machine (tFTG = 1/fFTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V(RAMh)
RAM retention supply voltage (1)
CPU halted
1.6
V
(1)
This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
Copyright
2005–2011, Texas Instruments Incorporated
47
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相关代理商/技术参数
参数描述
MSP430F2002TRSAR 功能描述:16位微控制器 - MCU 16-Bit Ultra Low Pwr 1kB Flash 128B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F2002TRSAT 功能描述:16位微控制器 - MCU 16-Bit Ultra Low Pwr 1kB Flash 128B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F2003 制造商:TI 制造商全称:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER
MSP430F2003IN 功能描述:16位微控制器 - MCU 16-Bit Ultra Low Pwr 1kB Flash 128B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F2003IPW 功能描述:16位微控制器 - MCU 16-bit Ultra-Lo-Pwr RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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