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参数资料
型号： MSP430F2617TPM
厂商： TEXAS INSTRUMENTS INC
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP64
封装： GREEN, PLASTIC, LQFP-64
文件页数： 72/102页
文件大小： 1509K
代理商： MSP430F2617TPM
MSP430F261x
MSP430F241x
www.ti.com
SLAS541H
– JUNE 2007 – REVISED MAY 2011
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time (1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
(2)
30
tFTG
tBlock, 0
Block program time for first byte or word
(2)
25
tFTG
Block program time for each additional
tBlock, 1-63
(2)
18
tFTG
byte or word
tBlock, End
Block program end-sequence wait time
(2)
6
tFTG
tMass Erase
Mass erase time
(2)
10593
tFTG
tSeg Erase
Segment erase time
(2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the Flash Controller
's state machine (tFTG = 1/fFTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V(RAMh)
RAM retention supply voltage (1)
CPU halted
1.6
V
(1)
This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
JTAG Interface
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
VCC
MIN
TYP
MAX
UNIT
2.2 V
0
5
fTCK
TCK input frequency(1)
MHz
3 V
0
10
RInternal
Internal pullup resistance on TMS, TCK, and TDI/TCLK(2)
2.2 V/3 V
25
60
90
k
(1)
fTCK may be restricted to meet the timing requirements of the module selected.
(2)
TMS, TCK, and TDI/TCLK pullup resistors are implemented in all versions.
JTAG Fuse
(1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
VFB
Voltage level on TEST for fuse blow
6
7
V
IFB
Supply current into TEST during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
(1)
Once the fuse is blown, no further access to the JTAG/Test and emulation feature is possible, and JTAG is switched to bypass mode.
Copyright
2007–2011, Texas Instruments Incorporated
71
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相关代理商/技术参数
参数描述
MSP430F2617TPM 制造商:Texas Instruments 功能描述:16-BIT MICROCONTROLLER IC ((NW))
MSP430F2617TPMR 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F2617TPN 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F2617TPNR 功能描述:16位微控制器 - MCU 16B Ultra-Lo-Pwr MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MSP430F2617TZQW 功能描述:16位微控制器 - MCU 16B MCU 92KB Fl 8KB RAM 12B ADC Dual DAC RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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